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Product

Product

1200V SiC MOSFET Series

Silicon Carbide MOSFETs from NOVOSENSE provide excellent RDSon temperature stability, high efficiency and optimal reliability. Our products cover 650V, 1200V and 1700V voltage classes. And also provide devices with a variety of RDSon values, from below 4mΩ to above 1Ω. Our products include TO247-4L, TO263-7L, and other packages, commonly used in industrial and automotive applications. It's noted that the NOVOSENSE SiC MOSFETs in through-hole package and surface mount package are designed with Kelvin source pins for optimized switching performance.

NPC0x0N120A is a 1200V SiC MOSFET product series, covering specifications such as 80mΩ, 60mΩ, 40mΩ, 22mΩ, etc. This series of products address the requirement of high-voltage, high-performance, and high-reliability SiC MOSFET in automotive and industrial applications, such as OBC/DC-DC, EV chargers, and photovoltaic and energy storage inverters.

Product Features

- Excellent RDSon temperature stability

- Wider gate drive voltage range (-8 ~ 22V)

   Supporting +15V/+18V mode (compatible with IGBT +15V)

   20% lower RDSon under +18V mode

- Outstanding threshold voltage consistency

- Very low forward voltage drop of the body diode and high robustness 

Application

- Photovoltaic and energy storage converters

- xEV battery charging infrastructure

- OBC/DCDC converter for xEVs

For more product information, please contact us.

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